Description
Chairman: Dr. Sergey TYUTYUNNIKOV (VBLHEP, JINR)
Mr
Maxim SAIFULIN
(FLNR, JINR)
13/12/2016, 11:00
The study of latent track morphology in oxides irradiated with swift heavy ions is an important aspect in the ongoing quest to understand the mechanisms responsible for their creation. Latent tracks are usually assumed to be cylindrical when employing indirect methods such as RBS/C to determine damage cross sections and infer equivalent track diameters from this data. Track diameters obtained...
Mr
Emad ELSEHLY
(Faculty of Science, Damanhour University, Egypt / Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University)
13/12/2016, 11:25
Samples of multi-walled carbon nanotubes (MWNTs) were irradiated with He ions. Scanning electron microscopy (SEM) images of the pristine and irradiatedsamples were obtained. SEM pictures showed that in the irradiated sample, the tubes are in general shorter unlike in the pristine sample. We also find from these images that average outer tube diameters change as a result of ion irradiation. The...
Mr
Ruslan RYMZHANOV
(FLNR, JINR)
13/12/2016, 11:50
The structure and formation threshold of swift heavy ion tracks in Al2O3 is studied using a combined modeling with original Monte-Carlo code TREKIS [1], describing the excitation of the electronic subsystem, and classical molecular dynamics of the lattice atoms. The advantages of developed approach are absence of free parameters and accounting for collective effects of solid state. The data...
Dr
Sergey KULIKOV
(FLNP, JINR)
13/12/2016, 12:15
Here we present the results of the international collaboration of researchers for creation and testing of the radiation-resistant sensors and the magnetic measurement instrumentations based on them in the IBR-2 nuclear research reactor for the monitoring of the magnetic field under high neutron fluence environment, typical for the NICA collider, LHC at CERN, as well as for the ITER, JET, DEMO...
Dr
Miroslaw KULIK
(FLNP, JINR)
13/12/2016, 12:40
The (100) surface of SI GaAs single crystals have been doubly irradiated with Xe+ ,In+ and Kr+ ions. The ion energies were in region from 100 keV to 300 keV, and the total fluence were 3x1013 cm-2 and 3x1016 cm-2. The parameters of the ion implantation, for all ions, were chosen to provide formation of a parallel flat layer containing the constant value of atomic concentration of doped atoms...