Speaker
Mr
Petr Smolyanskiy
(JINR)
Description
High resistivity gallium arsenide compensated by chromium fabricated by Tomsk State University has demonstrated a good suitability as sensor material for hybrid pixel detectors used in X-ray imaging systems with photon energies up to 60 keV. The material is available with thickness up to 1 mm and thanks to its Z number and fully active volume of the sensor high absorption efficiency in this energy region is provided.
Some results of works aimed at studying of the Timepix detectors hybridized with GaAs:Cr sensors of various thickness will be presented. The energy and spatial resolution, mu-tau charge carrier distribution over sensor area have been determined. By means of scanning the detector with pencil photon beam generated by synchrotron facility the geometrical mapping of pixel sensitivity is obtained as well as the energy resolution of a single pixel. The long-term stability of the detector has been evaluated based on the measurements performed over one year. Also radiation hardness of GaAs:Cr sensors was investigated by means of irradiation with 20 MeV electrons and some results will be presented. Current status of ATLAS-GaAsPix network based on Timepix detectors with GaAs:Cr sensors will be reported.
Primary author
Mr
Petr Smolyanskiy
(JINR)
