Speaker
Description
Stopping power of charged particle with an energy of several MeV and a charge variaty from one proton charge to several tens leads to failures in microelectronic devices designed for rapid storage and storage of information. For example, we are talking about failures, leading to the recharging of an memory element containing one or more transistors. The path length of ions with an energy of about MeV exceeds the size of semiconductor elements in modern microelectronic circuits by many orders of magnitude, reaching 10-100 micron. At the same time, the ions themselves can be obtained by nuclear reactions occurring during the movement of fast neutrons, the scales of the path length of which will noticeably exceed the path length of the ions. It is shown that for the needs of Monte Carlo programs, a promising model is one that allows converting optical databases of the dependence of the complex electrical permeability of a material into databases of the dependence of speed losses of a moving ion. The capabilities of the selected model are tested on broadening gamma lines.
