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A thin oxide layer called the native oxide layer forms on the surface of semiconductor materials when they are exposed to air. This native oxide layer has a significant impact on the electrical properties and operation of semiconductor devices. A common semiconductor material in electrical and optoelectronic applications is Gallium arsenide (GaAs). In order to enhance the functionality, dependability, and integration of GaAs-based devices, it is imperative to investigate the development and expansion of the native oxide layer on GaAs surfaces. The native oxide layer on the surface of the GaAs material was investigated in this work both before and after the implantation of noble gas ($Ne^+$, $Kr^+$, and $Xe^+$) ions. The GaAs samples were irradiated with 100 keV noble gas ions at a fluence of 3 x 1015 $ions/cm^2$ for the research at room temperature. The
depth profile of the elements on native oxide layer was determined using the Rutherford backscattering spectroscopy with nuclear reaction analysis (RBS/NR) method. At about 3.05 MeV, the nuclear reaction $^{16}O(^{4}He^+, ^{4}He^+)^{16}O$ shows elastic resonance. This resonance offers a practical way to extend RBS methods for examining the amount of oxygen present on sample surfaces. The backscattering cross-section near the resonance energy, which is up to 25 times greater than the Rutherford cross-section, indicates a clear resonance. The result of the RBS/NR method suggests that there is an oxygen-enriched layer on the surface of GaAs samples. It has also been shown that the thickness of native oxide layer varies with the type of ion.
