Speaker
Виктория Москаленко
Description
The results of a study on the effect of gamma radiation exposure on the properties of GaN transistors and amplifiers based on them, which can be utilized in the development of electromagnetic calorimeters and other detector systems for experiments in high-energy physics with high radiation load, are presented. The topology of GaN transistors was modeled, their characteristics were compared before and after irradiation, and the gamma radiation dose absorbed in the transistor material was calculated. Additionally, the density of gamma-induced crystal lattice defects was analyzed by means of deep-level transient spectroscopy (DLTS), and the results are presented.
Author
Виктория Москаленко
Co-author
Николай Атанов
(JINR)
