Speaker
Mr
Almas Yskakov
Description
Heterostructures of high quality А3В5 arsenides with a quantum well based on In-Ga1-уAs exhibit high mobility of a two-dimensional electron gas and are actively used in microwave heterostructure electronics. In the heterostructures, the current-conducting layer is very thin — of the order of 10–20 nm, enclosed between wide-gap barriers; therefore, the radiation physics of such structures may differ from what was done in classical bulk semiconductors. A set of samples with heterostructures were irradiated in the irradiation unit of the IBR-2 research reactor. Preliminary results on x-ray diffraction and Raman spectroscopy are obtained.
