Speaker
Alisher Mutali
(L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan; FLNR JINR, Russia)
Description
In this work the Raman spectroscopy method was used to study the radiation damage and associated internal mechanical stresses in polycrystalline silicon nitride ($Si_3N_4$). $Si_3N_4$ samples have been irradiated with swift heavy Xe and Bi ions with energies of 167 and 710 MeV, respectively, in the range of fluences from 1E11 to 4.87E13 $ions/cm^2$. The spectra of the cross-section of the irradiated region and the near-surface layer of the samples were registered at room temperature. The parameters of the FWHM - 205 $cm^{-1}$ and peak position - 862 $cm^{-1}$ were used to characterize the amorphization and mechanical stress level.
Primary author
Alisher Mutali
(L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan; FLNR JINR, Russia)
Co-authors
Ainash Zhumazhanova
(L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan)
Dr
Anel Ibrayeva
(JINR, Russia; Nur-Sultan Branch of Institute of Nuclear Physics, Kazakhstan)
Vladimir Skuratov
(FLNR JINR, Russia)
Maxim Zdorovets
(L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan)
