Raman spectroscopy study of damages induced in polycrystalline Si3N4 by swift heavy ion irradiation

Not scheduled
15m
Oral Applied Research Applied research

Speaker

Alisher Mutali (L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan; FLNR JINR, Russia)

Description

In this work the Raman spectroscopy method was used to study the radiation damage and associated internal mechanical stresses in polycrystalline silicon nitride ($Si_3N_4$). $Si_3N_4$ samples have been irradiated with swift heavy Xe and Bi ions with energies of 167 and 710 MeV, respectively, in the range of fluences from 1E11 to 4.87E13 $ions/cm^2$. The spectra of the cross-section of the irradiated region and the near-surface layer of the samples were registered at room temperature. The parameters of the FWHM - 205 $cm^{-1}$ and peak position - 862 $cm^{-1}$ were used to characterize the amorphization and mechanical stress level.

Primary author

Alisher Mutali (L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan; FLNR JINR, Russia)

Co-authors

Ainash Zhumazhanova (L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan) Dr Anel Ibrayeva (JINR, Russia; Nur-Sultan Branch of Institute of Nuclear Physics, Kazakhstan) Vladimir Skuratov (FLNR JINR, Russia) Maxim Zdorovets (L.N. Gumilyov Eurasian National University, Nur-Sultan, Kazakhstan)

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